Microelectronics Reliability

Microelectronics Reliability英文簡(jiǎn)介

Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged.

Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.

Microelectronics Reliability中文簡(jiǎn)介

《Microelectronics Reliability》是一本由PERGAMON-ELSEVIER SCIENCE LTD出版商出版的專業(yè)工程技術(shù)期刊，該刊創(chuàng)刊于1964年，刊期Monthly，該刊已被國(guó)際權(quán)威數(shù)據(jù)庫(kù)SCI、SCIE收錄。在中科院最新升級(jí)版分區(qū)表中，該刊分區(qū)信息為大類學(xué)科：工程技術(shù) 4區(qū)，小類學(xué)科：工程：電子與電氣 4區(qū)；納米科技 4區(qū)；物理：應(yīng)用 4區(qū)；在JCR（Journal Citation Reports）分區(qū)等級(jí)為Q4。該刊發(fā)文范圍涵蓋工程：電子與電氣等領(lǐng)域，旨在及時(shí)、準(zhǔn)確、全面地報(bào)道國(guó)內(nèi)外工程：電子與電氣工作者在該領(lǐng)域取得的最新研究成果、工作進(jìn)展及學(xué)術(shù)動(dòng)態(tài)、技術(shù)革新等，促進(jìn)學(xué)術(shù)交流，鼓勵(lì)學(xué)術(shù)創(chuàng)新。2021年影響因子為1.418，平均審稿速度較快,2-4周。

中科院分區(qū)最新升級(jí)版（當(dāng)前數(shù)據(jù)版本：2021年12月最新升級(jí)版）

大類學(xué)科	分區(qū)	小類學(xué)科	分區(qū)	Top期刊	綜述期刊
工程技術(shù)	4區(qū)	ENGINEERING, ELECTRICAL & ELECTRONIC 工程：電子與電氣 NANOSCIENCE & NANOTECHNOLOGY 納米科技 PHYSICS, APPLIED 物理：應(yīng)用	4區(qū) 4區(qū) 4區(qū)	否	否

JCR分區(qū)（當(dāng)前數(shù)據(jù)版本：2021-2022年最新版）

JCR分區(qū)等級(jí)	JCR所屬學(xué)科	分區(qū)	影響因子
Q4	NANOSCIENCE & NANOTECHNOLOGY	Q4	1.418
	PHYSICS, APPLIED	Q4
	ENGINEERING, ELECTRICAL & ELECTRONIC	Q4

期刊指數(shù)

影響因子	h-index	Gold OA文章占比	研究類文章占比	OA開(kāi)放訪問(wèn)	平均審稿速度
1.418	80	4.53%	98.03%	未開(kāi)放	較快,2-4周

IF值(影響因子)趨勢(shì)圖